A study of atomically-flat SiO2/Si interface formation mechanism, based onthe radical oxidation kinetics

Authors
Itoh, H Nagamine, M Satake, H Toriumi, A
Citation
H. Itoh et al., A study of atomically-flat SiO2/Si interface formation mechanism, based onthe radical oxidation kinetics, MICROEL ENG, 48(1-4), 1999, pp. 71-74
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
71 - 74
Database
ISI
SICI code
0167-9317(199909)48:1-4<71:ASOASI>2.0.ZU;2-G
Abstract
We have reported both the experimental results of the flat interface format ion and its mechanism based upon the theoretical analysis of the oxygen rad ical transport in the grown SiO2. We obtained the logarithmic dependence of the oxide film thickness on the oxidation time on the assumption that the deactivation of the oxygen radicals is proportional to the concentration. T he characteristic length "a" of the oxygen radicals plays an important role in forming the flat interface.