Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitter

Authors
Asli, N Gastev, SV Grekhov, IV Seegebrecht, P Shulekin, AF Tyaginov, SE Vexler, MI Zimmermann, H
Citation
N. Asli et al., Al/SiO2(2.0-2.5 nm)/p-Si tunnel junction as a light emitter, MICROEL ENG, 48(1-4), 1999, pp. 79-82
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
79 - 82
Database
ISI
SICI code
0167-9317(199909)48:1-4<79:ANTJAA>2.0.ZU;2-X
Abstract
Room-temperature hot electron luminescence of MOS tunnel diodes has been ex perimentally studied. Complete radiation spectra are presented for the firs t time for the direct-tunneling regime. Essential parameters are: oxide thi ckness 2.0...2.5 nm, doping level 2 . 10(18) cm(-3), current density simila r to 10(2) A/cm(2), and photon energy 0.73...3.2 eV.