Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation

Authors
Maser, K Mohr, U Leihkauf, R Ecker, K Beck, U Grambole, D Grotzschel, R Herrmann, F Krauser, J Weidinger, A
Citation
K. Maser et al., Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose N-15 ion beam irradiation, MICROEL ENG, 48(1-4), 1999, pp. 139-142
Citations number
28
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
139 - 142
Database
ISI
SICI code
0167-9317(199909)48:1-4<139:HMIWGS>2.0.ZU;2-A
Abstract
Three effects have been observed in wet-thermally grown SiO2/Si structures under bombardement with energetic N-15 ions: (1) Out-diffusion of H from the SiO2/Si system through the surface, (2) Accumulation of H at the SiO2/Si interface, (3) Changes in the optical fingerprint spectra of Psi and Delta in dependen ce on lambda (wavelength) obtained by ellipsometric measurements.