Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress

Authors
Kerber, M Schwalke, U Innertsberger, G
Citation
M. Kerber et al., Evidence for spatial distribution of traps in MOS systems after Fowler Nordheim stress, MICROEL ENG, 48(1-4), 1999, pp. 147-150
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
147 - 150
Database
ISI
SICI code
0167-9317(199909)48:1-4<147:EFSDOT>2.0.ZU;2-W
Abstract
The static C-V characteristics allows to separate interface traps and slow traps in MOS systems after high field injection stress. A procedure is deve loped to deduce the spatial distribution of rechargeable traps in the gate dielectric. The method is based on charge conservation and voltage boundary conditions at the interfaces.