Separation of electron and hole traps by transient current analysis

An experimental method capable of separating electron and hole transient cu rrents in MOS devices is presented. The measurements of transient discharge resulting from voltage step above threshold voltage allow a quantitative e valuation of the trap energy distribution and of its dependence on stress. Traps aligned with the oxide band gap are found to increase strongly after stress. The separation of steady-state currents has been also performed, an d discussed in terms of the stress-dependent trap distribution obtained fro m the transient separation analysis.