A study of proton generation in Si/SiO2/Si structures

The results of a study of the proton generation reaction in Si/SiO2/Si stru ctures during forming gas (N-2, H-2) annealing are presented. The main obje ctive of the experiment was to determine the type of the reaction, i.e. to ascertain whether the oxide surface or oxide volume is predominant. We conc lude that the oxide surface related generation mechanism appears to be the most important. At the same time as protons are generated, we observed a ch ange in the top Si layer resistance. This may be associated with the reacti on with hydrogen during the forming gas anneal.