Two-fold coordinated nitrogen atom: an electron trap in MOS devices with silicon oxynitride as the gate dielectric

Having conducted semiempirical quantum-chemical simulation (MINDO/3) of sev eral clusters at different charge states, we identify that the two-fold coo rdinated nitrogen atom with an un-paired electron (=Si2N .) is the most res ponsible trap center for the observation of large electronic capturing in S iOxNy. Our calculations also show that electron localized in this defect wi ll result in spin dissipation. Trap formation and removal mechanisms during nitridation and re-oxidation are also discussed in this work.