RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions

By measuring the RTS capture kinetics in submicron nMOSFETs under condition s of a constant drain current but changed gate and substrate bias in linear operation, it has been found that a high surface electric field E-s is the important factor that controls the RTS capture kinetics and the Coulomb bl ockade energy Delta E. In fact, it is shown that the capture time constant and the value of Delta E may be presented as unique functions of the value of NsEs and NsEs2, respectively, where N-s is the inversion surface charge density in the channel. This effect is attributed to the fact that some dis tance exists between the centroid of the inversion layer and the Si/SiO2 in terface under conditions of surface quantization occuring at sufficiently h igh values of E-s and this distance decreases with increasing E-s.