A study of 100 nm channel length asymmetric channel MOSFET by using chargepumping

Lateral Asymmetric Channel (LAC) MOSFETs with channel lengths down to 0.1 m u m have been fabricated and characterized for their electrical performance . Using charge pumping, we show, for the first time, channel V-T profiles o btained experimentally, demonstrating realization of asymmetric channel MOS FETs down to 0.1 mu m channel lengths. Our detailed experimental characteri zations show improved performance for LAC MOSFETs over conventional MOSFETs , in addition to excellent hot-carrier reliability. Based on 2-D device sim ulation results, we attribute the improved hot-carrier reliability in LAC M OSFETs to the reduced peak lateral electric field in the channel.