Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices

In this study we present a new scheme for obtaining information on the pass ivation mechanisms of as-grown Si-SiO2 interface defects by resolving the e ffects of bias on the defect passivation reaction. This is possible when us ing chromium gated metal-oxide-silicon devices for which the effect of non- biased passivation is very small compared to devices with for example alumi num gates. It is shown that a negative surface potential promotes the passi vation of interface states while a positive surface potential reduces it.