La. Ragnarsson et P. Lundgren, Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices, MICROEL ENG, 48(1-4), 1999, pp. 219-222
In this study we present a new scheme for obtaining information on the pass
ivation mechanisms of as-grown Si-SiO2 interface defects by resolving the e
ffects of bias on the defect passivation reaction. This is possible when us
ing chromium gated metal-oxide-silicon devices for which the effect of non-
biased passivation is very small compared to devices with for example alumi
num gates. It is shown that a negative surface potential promotes the passi
vation of interface states while a positive surface potential reduces it.