SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation

Authors
Riley, LS Hall, S Harris, J Fernandez, J Gallas, B Evans, AGR Clarke, JF Humphrey, J Murray, RT Jeynes, C
Citation
Ls. Riley et al., SiGe nMOSFETs with gate oxide grown by low temperature plasma anodisation, MICROEL ENG, 48(1-4), 1999, pp. 227-230
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
227 - 230
Database
ISI
SICI code
0167-9317(199909)48:1-4<227:SNWGOG>2.0.ZU;2-P
Abstract
The characterisation of strained surface channel SiGe nMOSFETs with gate ox ide grown by low temperature plasma anodisation is described. We report exc ellent off-state leakage currents and zero field mobilities of 640 and 420c m(2)/Vs for Si and SiGe devices respectively. Reduction in SiGe mobility is primarily attributed to increased interface state scattering in the absenc e of any increased surface roughness as observed in high resolution microsc opy, The oxide compositon is mixed and conservation of crystallinity of SiG e during oxidation is observed via RBS analysis.