Oxidation of 6H-SiC(0001)

In this work we intend to determine whether the SiO2/6H-SiC(0001) interface is really carbon enriched. Among numerous publications dealing with 6H-SiC oxidation, our specificity resides in a simultaneous use of ultra-high vac uum surface cleaning and characterization methods (X-ray spectroscopy) and standard technological conditions for the oxidation i.e. dry oxidation at 1 atm of O-2 and a temperature of 1000 degrees C. The oxidation of 3x3 Si-ri ch and 6 root 3x6 root 3R30 degrees C-rich reconstructed surfaces is compar ed, taking care to transfer the samples without uncontrolled air exposures. No C-C or C-O bonds are observed:at the SiO2/SiC interface by C 1s core li ne analyses whatever the initial surface is. We conclude that there is no c ontraindication to obtain nearly ideal SiO2/SiC interfaces on flat SiC terr aces.