Forward and reverse currents in the amorphous SiC/pSi structure were studie
d in the temperature range from 30 to 80 K. Charging of electron traps loca
ted in the SiC layer increases the forward current due to reduction of the
potential barrier for holes. The current was found to be controlled by the
Poole-Frenkel emission via the system of levels in the SiC layer located at
0.048 eV and 0.065 eV above the edge of the valence band.