Electrical characterization of the amorphous SiC-pSi structure

Authors
Lysenko, VS Tyagulski, IP Gomeniuk, YV Osiyuk, IN Mikhnov, AK
Citation
Vs. Lysenko et al., Electrical characterization of the amorphous SiC-pSi structure, MICROEL ENG, 48(1-4), 1999, pp. 265-268
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
265 - 268
Database
ISI
SICI code
0167-9317(199909)48:1-4<265:ECOTAS>2.0.ZU;2-9
Abstract
Forward and reverse currents in the amorphous SiC/pSi structure were studie d in the temperature range from 30 to 80 K. Charging of electron traps loca ted in the SiC layer increases the forward current due to reduction of the potential barrier for holes. The current was found to be controlled by the Poole-Frenkel emission via the system of levels in the SiC layer located at 0.048 eV and 0.065 eV above the edge of the valence band.