A simple method for the evaluation of the recombination parameters in SiC MOS structures

Authors
Rudenko, T Sveinbjornsson, E Sadeghi, M
Citation
T. Rudenko et al., A simple method for the evaluation of the recombination parameters in SiC MOS structures, MICROEL ENG, 48(1-4), 1999, pp. 273-276
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
273 - 276
Database
ISI
SICI code
0167-9317(199909)48:1-4<273:ASMFTE>2.0.ZU;2-V
Abstract
This paper presents an analysis of non-equilibrium behavior of the room-tem perature inversion layer in a SiC MOS structure. Different mechanisms respo nsible for recombination of the excess inversion carriers are discussed. A simple method for the evaluation of recombination lifetime in the subsurfac e region of SiC is proposed. The method is based on the room-temperature hi gh-frequency CV-measurements. The limitations for the applicability of the proposed method are outlined.