This paper presents an analysis of non-equilibrium behavior of the room-tem
perature inversion layer in a SiC MOS structure. Different mechanisms respo
nsible for recombination of the excess inversion carriers are discussed. A
simple method for the evaluation of recombination lifetime in the subsurfac
e region of SiC is proposed. The method is based on the room-temperature hi
gh-frequency CV-measurements. The limitations for the applicability of the
proposed method are outlined.