Defect studies in epitaxial SiC-6H layers on insulator (SiCOI)

Authors
Hugonnard-Bruyere, E Cantin, JL von Bardeleben, HJ Letertre, F DiCioccio, L Ouisse, T
Citation
E. Hugonnard-bruyere et al., Defect studies in epitaxial SiC-6H layers on insulator (SiCOI), MICROEL ENG, 48(1-4), 1999, pp. 277-280
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
277 - 280
Database
ISI
SICI code
0167-9317(199909)48:1-4<277:DSIESL>2.0.ZU;2-B
Abstract
Nitrogen doped N-type 6H-SiCOI structures have been obtained by the Smart C ut(R) technique. The process induced defects and their electrical activity have been analysed by electron paramagnetic resonance (EPR) spectroscopy, p hotoluminescence and Hall measurements. The influence of thermal annealing at temperatures between 800 and 1300 degrees C has been studied. The 1300 d egrees C annealing step is required to recover the N-type conductivity, eve n though compensating defects at concentrations of 1x10(18)cm(-3) are still present.