Physics and characterization of transient effects in SOI transistors

Authors
Lacaita, AL Perron, LM
Citation
Al. Lacaita et Lm. Perron, Physics and characterization of transient effects in SOI transistors, MICROEL ENG, 48(1-4), 1999, pp. 319-326
Citations number
26
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
319 - 326
Database
ISI
SICI code
0167-9317(199909)48:1-4<319:PACOTE>2.0.ZU;2-R
Abstract
The work reviews the physics of transient floating-body effects in SOI devi ces and gives some examples of their impact on circuit performance.