CMOS/SOI technologies for low-power and low-voltage circuits

Authors
Pelloie, JL Raynaud, C Faynot, O Grouillet, A de Pontcharra, JD
Citation
Jl. Pelloie et al., CMOS/SOI technologies for low-power and low-voltage circuits, MICROEL ENG, 48(1-4), 1999, pp. 327-334
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
327 - 334
Database
ISI
SICI code
0167-9317(199909)48:1-4<327:CTFLAL>2.0.ZU;2-N
Abstract
This paper provides the fundamental basis for addressing current and future CMOS/SOI technologies, which will be mainly dedicated to low-voltage and l ow-power applications. This review focuses on SOI substrates fabrication, S OI devices (fully-depleted, partially-depleted, DTMOS) and their electrical behavior, and SOI transistor modeling.