Photoluminescence spectra of SIMOX buried oxide layers prepared under various conditions

The intensity of photoluminescence (PL) peaks at 4.1 eV (300 nm) and 3.1 eV (400 nm) for the buried oxide (BOX) layer of SIMOX structures is less for triple-implant than for single implant samples and is further reduced in si ngle-implant sample by supplemental oxygen implantation. Heat treatment of samples from which the top Si layer was removed decreases the PL intensity in the ultraviolet (UV) region even further. The behavior of the PL is main ly attributed to oxygen deficiency centers in the surface region of a-Si na noclusters in the BOX layer.