Investigation of SOI MOSFETs with ultimate thickness

Ultra-thin SOI MOSFETs with 1-5nm thick SOI film, are experimentally and th eoretically investigated. Single- and double-gate configurations are compar ed; the double-gate MOSFET exhibits a substantial increase in transconducta nce, presumably resulting from volume inversion. Most of the experimental d ata can be explained by combining classical models with self-consistent qua ntum calculations. The characteristics are well-behaved and reveal unique " ultra-thin" film properties: enhanced interface coupling and body-substrate coupling, degraded mobility, increased threshold voltage.