High-amplitude and high-frequency oscillations of temperature and current in SOI structure

Authors
Dobrovolsky, VN Ishchuk, LV Ninidze, GK Balucani, M Ferrari, A
Citation
Vn. Dobrovolsky et al., High-amplitude and high-frequency oscillations of temperature and current in SOI structure, MICROEL ENG, 48(1-4), 1999, pp. 343-346
Citations number
7
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
343 - 346
Database
ISI
SICI code
0167-9317(199909)48:1-4<343:HAHOOT>2.0.ZU;2-O
Abstract
Interconnected oscillations of current, lattice temperature and electron-ho le pair concentration were observed in SOI structures upon heating with cur rent at extremely high power. They occur because of the joint action of two competing mechanisms: temperature dependent thermal generation of electron -hole pairs and pair concentration decreasing by current flowing in silicon film through a non-uniform temperature field.