The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films

Authors
Zvanut, ME Chun, W Stahlbush, RE
Citation
Me. Zvanut et al., The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films, MICROEL ENG, 48(1-4), 1999, pp. 347-350
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
347 - 350
Database
ISI
SICI code
0167-9317(199909)48:1-4<347:TEOCAT>2.0.ZU;2-2
Abstract
Vacuum ultraviolet hole injection was used to study the initial trapping pr operties of three different types of buried oxides, SIMOX, Unibond, and pol ySi/SiO2/Si samples. After accounting for the charge centroid, the initial hole trapping efficiency for SIMOX samples is shown to be at least a factor of four greater than that measured for Unibond buried oxides. We suggest t hat the difference is due to the post fabrication anneal temperature and th e lack of moisture in the ambient during the anneal.