Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs

Authors
Munteanu, D Cristoloveanu, S
Citation
D. Munteanu et S. Cristoloveanu, Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs, MICROEL ENG, 48(1-4), 1999, pp. 355-358
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
355 - 358
Database
ISI
SICI code
0167-9317(199909)48:1-4<355:MFTEOT>2.0.ZU;2-H
Abstract
A new model is proposed for the extraction of the recombination lifetime in partially depleted (PD) SOI MOSFETs. The model uses drain current overshoo ts induced when turning on the transistor or when pulsing the back gate fro m strong accumulation to depletion. This model is validated through systema tic simulations and is applied to the characterization of recent SOI substr ates.