Citation
D. Ballutaud et al., Hydrogen thermal stability in buried oxides of SOI structures, MICROEL ENG, 48(1-4), 1999, pp. 359-362
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317
→ ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
359 - 362
Database
ISI
SICI code
0167-9317(199909)48:1-4<359:HTSIBO>2.0.ZU;2-U
Abstract
The interactions of hydrogen (deuterium used as tracer) with Si-SiO2-Si bur
ied oxide layers (BOX) prepared by thermal oxidation or by oxygen implantat
ion (SIMOX) are investigated using Secondary Ion Mass Spectrometry (SIMS) m
easurements combined with effusion experiments and isothermal annealings.