Sub-band-gap impact ionization events in transient regimes of floating body SOI devices

Authors
Ionescu, AM Chovet, A
Citation
Am. Ionescu et A. Chovet, Sub-band-gap impact ionization events in transient regimes of floating body SOI devices, MICROEL ENG, 48(1-4), 1999, pp. 371-374
Citations number
4
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
371 - 374
Database
ISI
SICI code
0167-9317(199909)48:1-4<371:SIIEIT>2.0.ZU;2-H
Abstract
The aim of this paper is to demonstrate via experiments and 2-D numerical s imulation that in transient regimes of partially depleted (PD) SOI MOSFETs the sub-band-gap impact ionization becomes more critical compared to the st atic regime, and can stand for sub-1.1 V=E-Gsi/q drain voltages, in both sh ort and long channels.