An. Nazarov et al., Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide, MICROEL ENG, 48(1-4), 1999, pp. 379-382
A high-temperature drain current "jump" in fully depleted SOI n-channel MOS
FET is reported for the first time. The phenomenon appears in the SIMOX SOI
MOSFETs at temperatures above 200 degrees C after a negative voltage is ap
plied to the substrate. Direct link of the current "jump" with the positive
charge formation in the buried oxide (BOX) has been demonstrated. The curr
ent "jump" or a front channel high-temperature kink-effect is explained by
electron retrapping in the (BOX) in the vicinity of the BOX-silicon body in
terface.