Association of high-temperature kink-effect in SIMOX SOI fully depleted n-MOSFET with bias temperature instability of buried oxide

A high-temperature drain current "jump" in fully depleted SOI n-channel MOS FET is reported for the first time. The phenomenon appears in the SIMOX SOI MOSFETs at temperatures above 200 degrees C after a negative voltage is ap plied to the substrate. Direct link of the current "jump" with the positive charge formation in the buried oxide (BOX) has been demonstrated. The curr ent "jump" or a front channel high-temperature kink-effect is explained by electron retrapping in the (BOX) in the vicinity of the BOX-silicon body in terface.