Charge trapping in ONO interpoly dielectric of FLOTOX EEPROM cells

Authors
Brucklmeier, E Kux, A Kakoschke, R Palm, H
Citation
E. Brucklmeier et al., Charge trapping in ONO interpoly dielectric of FLOTOX EEPROM cells, MICROEL ENG, 48(1-4), 1999, pp. 411-414
Citations number
3
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
48
Issue
1-4
Year of publication
1999
Pages
411 - 414
Database
ISI
SICI code
0167-9317(199909)48:1-4<411:CTIOID>2.0.ZU;2-Z
Abstract
The threshold voltage loss of erased FLOTOX EEPROM cells with various ONO i nterpoly dielectric layers has been studied as a function of bake time and programming pulse amplitude. The results show a displacement of electrons i njected into the nitride layer to be the root cause of the threshold voltag e lowering. A quantitative model has been used for optimizing the cell laye r construction as well as the cell operating conditions with respect to a m inimized programming voltage at a maximum data retention.