Thermally activated defect transformations in III-V compound semiconductors

Defect properties are usually studied by the analysis of their thermally ac tivated transformations. In this paper the results of the first RBS/channel ing study of the simple defect behavior in the GaAs single crystals and Alx Ga1-xAs epitaxial layers irradiated at 77 K and annealed at temperatures ra nging from 77 to 650 K are presented. Two important recovery stages at 280 and 450 K were revealed. They were attributed to the defect mobility in the Ga- and As-sublattice, respectively. The structure of defects and their pr operties are discussed and the comparison with findings obtained using othe r analytical techniques is made.