Sample rotation applied in the SIMS depth profile analysis of layered structures

The Secondary ion Mass Spectrometry (SIMS) depth profile analysis has been performed on a 20 nm thick sandwich structure, composed of 10 layers of B4C /Mo, each 2 nm thick, deposited on the silicon substrate. In order to reduc e roughening effects, ion bombardment at the inclined angle and sample rota tion have been applied. The comparison of the standard-stationary sample te chique with the sample rotation technique is presented. The analyses were p erformed on the SAJW-02 analyser using 4 keV, 100 nA, Ar+ and O-2(+) ion be am.