AlN layers plasmochemically produced as semiconductors

Authors
Werbowy, A Pawlowski, P Siwiec, J Szmidt, J Olszyna, A Sokolowska, A
Citation
A. Werbowy et al., AlN layers plasmochemically produced as semiconductors, NUKLEONIKA, 44(2), 1999, pp. 253-260
Citations number
9
Categorie Soggetti
Physics
Journal title
NUKLEONIKA
ISSN journal
00295922 → ACNP
Volume
44
Issue
2
Year of publication
1999
Pages
253 - 260
Database
ISI
SICI code
0029-5922(1999)44:2<253:ALPPAS>2.0.ZU;2-5
Abstract
The paper presents the results on investigations of heterojunction of nanoc rystalline AIN layers of p-type with n-type Si. The layers were produced wi th the impulse plasma assisted MO CVD at 300 K. The heterostructures exhibi ted the photovoltaic effect with the enlarged spectral quantum efficiency a s well as good rectifying and electroluminescence properties.