Modification of temperature dependence of manganin resistance using the ion implantation techniques

Authors
Slowinski, B Wilczynska, T Wisniewski, R
Citation
B. Slowinski et al., Modification of temperature dependence of manganin resistance using the ion implantation techniques, NUKLEONIKA, 44(2), 1999, pp. 277-280
Citations number
3
Categorie Soggetti
Physics
Journal title
NUKLEONIKA
ISSN journal
00295922 → ACNP
Volume
44
Issue
2
Year of publication
1999
Pages
277 - 280
Database
ISI
SICI code
0029-5922(1999)44:2<277:MOTDOM>2.0.ZU;2-A
Abstract
The problem of the improvement of the resistance dependence on temperature of manganin pressure sensor is discussed. Using 46 MeV Ar-40 and 118 MeV Xe -136 ions with the fluences of 3x10(13) and 2.5x10(14) cm(-2) respectively, a clear shift of the characteristic temperature, at which the manganin res istance reaches its maximum value, toward lower values and a small increase of pressure sensitivity have been observed.