Changes in permittivity of silicon implanted through an aluminum layer

Authors
Zukowski, P Partyka, J Wegierek, P
Citation
P. Zukowski et al., Changes in permittivity of silicon implanted through an aluminum layer, NUKLEONIKA, 44(2), 1999, pp. 285-288
Citations number
5
Categorie Soggetti
Physics
Journal title
NUKLEONIKA
ISSN journal
00295922 → ACNP
Volume
44
Issue
2
Year of publication
1999
Pages
285 - 288
Database
ISI
SICI code
0029-5922(1999)44:2<285:CIPOSI>2.0.ZU;2-G
Abstract
The paper discusses the unit capacity changes in capacitors with a dielectr ic in a from of silicon implanted through an aluminum layer. The result of tests indicate that the course of C-u = f(T-a) is determined to a great ext ent by the processes in the implanted layer while the effect of the capacit or plates is insignificant.