Simulation of the process of high dose ion implantation in solid targets

The theoretical approach and physico-mathematical model for the process of the high dose ion implantation are developed. The model, involved, makes it possible to take into account a set of the following effects: scattering o f the being implanted ions on the atoms introduced at the earlier stages; s puttering of the target surface by ion beams; as well as the target swellin g with a valid account for influence of mobile boundary. The simulation of ion implantation processes into crystals was performed on the basis of Mont e-Carlo method.