Optical nonlinearities at transient quenching of EL2 defect at room temperature

Citation
M. Sudzius et al., Optical nonlinearities at transient quenching of EL2 defect at room temperature, OPT COMMUN, 170(1-3), 1999, pp. 149-160
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS COMMUNICATIONS
ISSN journal
00304018 → ACNP
Volume
170
Issue
1-3
Year of publication
1999
Pages
149 - 160
Database
ISI
SICI code
0030-4018(19991015)170:1-3<149:ONATQO>2.0.ZU;2-7
Abstract
We investigate numerically the nonequilibrium dynamics of carriers and inte rnal space charge field during the photoquenching of metastable defect EL2 by short pulse of light interference field. Simulation of free carrier, pho torefractive, and absorptive optical nonlinearities at various illumination intensities allowed us to reveal conditions for the efficient transient qu enching of EL2 at room temperature. Contribution of this effect to light di ffraction and absorption is in favorable agreement with experimental data o f degenerate four-wave mixing at 1.06 mu m wavelength in LEC and Bridgeman- grown GaAs crystals using 10-ns duration YAG:Nd laser pulses. (C) 1999 Else vier Science B.V. All rights reserved.