B. Sheinman et D. Ritter, Measurement of the energy dependent impact ionization rate in Ga0.47In0.53As near threshold, PHYS REV L, 83(17), 1999, pp. 3522-3525
The energy dependent impact ionization rate near threshold in Ga0.47In0.53A
s was directly measured using a narrow collector heterojunction bipolar tra
nsistor. A vertically integrated p-i-n diode served to detect the holes gen
erated by impact ionization, as a function of the applied collector-base vo
ltage. A pronounced but soft threshold was observed very close to the energ
y gap.