Measurement of the energy dependent impact ionization rate in Ga0.47In0.53As near threshold

Authors
Sheinman, B Ritter, D
Citation
B. Sheinman et D. Ritter, Measurement of the energy dependent impact ionization rate in Ga0.47In0.53As near threshold, PHYS REV L, 83(17), 1999, pp. 3522-3525
Citations number
15
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
17
Year of publication
1999
Pages
3522 - 3525
Database
ISI
SICI code
0031-9007(19991025)83:17<3522:MOTEDI>2.0.ZU;2-8
Abstract
The energy dependent impact ionization rate near threshold in Ga0.47In0.53A s was directly measured using a narrow collector heterojunction bipolar tra nsistor. A vertically integrated p-i-n diode served to detect the holes gen erated by impact ionization, as a function of the applied collector-base vo ltage. A pronounced but soft threshold was observed very close to the energ y gap.