The fundamental mechanisms of charge migration in DNA are pertinent for cur
rent developments in molecular electronics and electrochemistry-based chip
technology. The energetic control of hole (positive ion) multistep hopping
transport in DNA proceeds via the guanine, the nucleobase with the lowest o
xidation potential. Chemical yield data for the relative reactivity of the
guanine cations and of charge trapping by a triple guanine unit in one of t
he strands quantify the hopping, trapping, and chemical kinetic parameters.
The hole-hopping rate for superexchange-mediated interactions via two inte
rvening AT base pairs is estimated to be 10(9) s(-1) at 300 K. We infer tha
t the maximal distance for hole hopping in the duplex with the guanine sepa
rated by a single AT base pair is 300 +/- 70 Angstrom. Although we encounte
r constraints for hole transport in DNA emerging from the number of the med
iating AT base pairs, electron transport is expected to be nearly sequence
independent because of the similarity of the reduction potentials of the th
ymine and of the cytosine.