A numerical investigation into the effect of the p-well/n-substrate injection efficiency on the uniformity of electron injection during substrate hotelectron experiments

Two-dimensional numerical simulations of a typical MOST test structure used to investigate the injection of hot electrons into SiO2 gate oxide are pre sented. The results show that the emitter efficiency of the p-well/n-substr ate junction, when biased to provide the source of electrons, can have a si gnificant influence on the uniformity of oxide injection, This is an import ant factor for the correct interpretation of the experimental data. An anal ysis is presented that allows an estimate of the conditions required for un iformity to be obtained. (C) 1999 Elsevier Science Ltd. All rights reserved .