An energy relaxation time model for device simulation

Authors
Gonzalez, B Palankovski, V Kosina, H Hernandez, A Selberherr, S
Citation
B. Gonzalez et al., An energy relaxation time model for device simulation, SOL ST ELEC, 43(9), 1999, pp. 1791-1795
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
9
Year of publication
1999
Pages
1791 - 1795
Database
ISI
SICI code
0038-1101(199909)43:9<1791:AERTMF>2.0.ZU;2-4
Abstract
We present an empirical model for the electron energy relaxation time. It i s based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation ti mes are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition, (C) 1999 Elsevier Science Ltd. All rights reserved.