GaN metal oxide semiconductor field effect transistors

A GaN based depletion mode metal oxide semiconductor field effect transisto r (MOSFET) was demonstrated using Ga2O3(Gd2O3) as the gate dielectric. The MOS gate reverse breakdown voltage was >35 V which was significantly improv ed from 17 V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V-ds = 30 V and device perform ance was limited by the contact resistance. A unity current gain cut-off fr equency, f(T), and maximum frequency of oscillation: f(max) of 3.1 and 10.3 GHz, respectively, were measured at V-ds = 25 V and V-gs = -20 V. (C) 1999 Elsevier Science Ltd. All rights reserved.