We report on thin-film photodetectors optimized for detecting the vacu
um UV and rejection of the visible spectrum of electromagnetic radiati
on. The devices are made of hydrogenated amorphous silicon and silicon
carbide on a glass substrate. At room temperature the photodetectors
exhibit quantum efficiencies of 52% at lambda = 58.4 nm, 1% at lambda
= 400 nm, and 0.1% at lambda = 650 nm. The response time for UV pulses
from an N-2 laser gives signals of 6-mu s full width at half-maximum
and 500-ns rise time. (C) 1997 Optical Society of America.