Band gaps of lattice-matched (Ga,In)(As,N) alloys

The band gaps of the GaInAsN alloys lattice-matched to GaAs and InP have be en calculated as a function of the nitrogen composition and as a function o f pressure, by using a pseudopotential technique. The calculations are in e xcellent agreement with the experimental results, which are only available for small nitrogen compositions. The band gap of both lattice-matched syste ms is predicted to significantly decrease when further increasing the nitro gen content. As a result, the band gap of both systems closes for large eno ugh nitrogen compositions (around 12%-20%). (C) 1999 American Institute of Physics. [S0003-6951(99)00743-3].