Room-temperature lasing oscillation in an InGaN self-assembled quantum dotlaser

We have demonstrated laser action of an InGaN self-assembled quantum dot (Q D) laser by optical pumping. We have grown the laser structure with the In0 .2Ga0.8N QDs embedded in the active layer, using atmospheric-pressure metal organic chemical vapor deposition. A clear threshold was observed in the re lation between the excitation and emission intensity at room temperature. A bove the threshold, the width of the emission peak was below 0.1 nm (resolu tion limit), and the emission was strongly polarized in the transverse elec tric mode. These results indicate that lasing oscillation in the InGaN self -assembled QD laser has been achieved at room temperature. (C) 1999 America n Institute of Physics. [S0003-6951(99)03643-8].