To investigate the role of the perovskite layers on fatigue behaviors, SrBi
2Ta2O9(SBT) and Bi3TiTaO9 (BTT) films were prepared by pulsed laser deposit
ion using 15% Bi-excess bulk targets. The SBT and the BTT films grown at th
e similar deposition conditions showed similar growth behaviors, electrical
properties, and retention characteristics. However, these films showed ver
y different fatigue behaviors. The difference should come from the oxygen s
tability in the perovskite layer. Our work demonstrates that oxygen stabili
ty of the perovskite layers, as well as the self-regulating adjustment of t
he Bi2O2 layers, should be considered in the search for new candidate mater
ials for nonvolatile ferroelectric memory devices. (C) 1999 American Instit
ute of Physics. [S0003-6951(99)02243-3].