(Pb1-xLax)(Zr1-yTiy)O-3 patterns on Pt-coated silicon prepared by pulsed laser deposition process

Ferroelectric (PbxLa1-x)(ZryTi1-y)O-3 (PLZT) thin films on Pt(Si) substrate s have been synthesized using a two-step process, which includes low temper ature pulsed laser deposition (PLD) and high temperature rapid thermal anne aling (RTA). Pure perovskite PLZT phase can be achieved by RTA at 550 degre es C (1-60 s), provided that the crystalline SrRuO3 layer is used as buffer layer on top of Pt(Si) substrates. Interdiffusion between layers is effici ently suppressed. Increasing the RTA duration insignificantly modifies the crystalline structure and the microstructure of the PLZT/SRO/Pt(Si) films, but significantly improves the ferroelectric properties and leakage charact eristics of the films. The electrical properties, which are optimized for t he films RTA at 550 degrees C (30 s), are P-r=19 mu C/cm(2), E-c=70 kV/cm, and J(L)< 10(-5) A/cm(2) for E-a< 450 kV/cm applied field. A self-aligned p attern consisting of crystalline PLZT dots with good ferroelectric properti es (P-r=14 mu C/cm(2), E-c=80 kV/cm) has been demonstrated. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)02443-2].