Growth and characterization of SrBi2Nb2O9 thin films by pulsed-laser ablation

Polycrystalline films of SrBi2Nb2O9 were grown using pulsed-laser ablation. The ferroelectric properties were achieved by low-temperature deposition f ollowed by a subsequent annealing process. The lower switching voltage was obtained by lowering the thickness, which did not affect the insulating nat ure of the films. The hysteresis results showed an excellent square-shaped loop with results (P-r=6 mu C/cm(2), E-c=100 kV/cm) in good agreement with earlier reports. The films also exhibited a dielectric constant of 250 and a dissipation factor of 0.02. The transport studies indicated an ohmic beha vior, while higher voltages induced a bulk space charge. (C) 1999 American Institute of Physics. [S0003-6951(99)04142-X].