SCANNING TUNNELING MICROSCOPE OBSERVATION OF SI(111)-3X1-AG STRUCTURE
Citation
H. Ohnishi et al., SCANNING TUNNELING MICROSCOPE OBSERVATION OF SI(111)-3X1-AG STRUCTURE, JPN J A P 1, 33(6B), 1994, pp. 3683-3687
Categorie Soggetti
Physics, Applied
Abstract
A scanning tunneling microscope has been used to study the Si(111)-3 x
1-Ag surface. The 3 x 1-Ag surface has been observed to consist of a
bright row and small protrusions; the bright row points in the [1BAR10
] direction and the protrusions point in the [123BAR] and [213BAR] dir
ections. The width of 3 x 1-Ag domains, nucleated on the Si-7 x 7 terr
aces, has been found to be (21n - 2)a, where n is an integer (n = 1, 2
, ...) and a is the lattice constant of Si (a=3.84 angstrom). Detailed
investigation on domain boundaries reveals that both sides of the 3 x
1-Ag domain face the unfaulted halves of the 7 x 7 structure. Moreove
r, two types of domain boundaries have been observed: one which runs a
cross the corner holes, and another is that runs apart from the corner
holes, leaving a narrow 7 x 7 terrace of one adatom width. Possible s
tructural models for the 3 x 1-Ag surface are proposed based on the pr
esent STM results.