Planar optical waveguides in single crystals of KNbO3 were fabricated by Me
V B and He ion implantation. The depth profiles of radiation damage in thes
e waveguides were compared and analyzed by high resolution transmission ele
ctron microscope. Non leaky waveguiding modes (TE0 and TM0), which are due
to implantation induced increase of n(b) and n(c), were observed in 6.0 MeV
B ion implantated waveguides with a dose of 1 x 10(15) cm(-2).