Ultrafast heavy hole-phonon scattering in highly n-doped GaAs

Authors
Lin, WZ Huang, C Zhang, HC Wen, JH Guo, B Lai, TS
Citation
Wz. Lin et al., Ultrafast heavy hole-phonon scattering in highly n-doped GaAs, CHIN PHYS L, 16(10), 1999, pp. 758-760
Citations number
13
Categorie Soggetti
Physics
Journal title
CHINESE PHYSICS LETTERS
ISSN journal
0256307X → ACNP
Volume
16
Issue
10
Year of publication
1999
Pages
758 - 760
Database
ISI
SICI code
0256-307X(1999)16:10<758:UHHSIH>2.0.ZU;2-Q
Abstract
Ultrafast heavy hole-phonon interactions in highly n-doped GaAs have been s electively studied with femtosecond absorption saturation measurements by t uning the pump-probe photon energy just above the doped electron Fermi edge . A. heavy hole-phonon scattering time of similar to 300fs has been measure d, which is consistent with that calculated by a numerical model. According ly, an optical deformation potential of about 31 eV has been estimated for this highly n-doped sample.