L. Jiang et al., In situ Rutherford backscattering spectrometry analysis of films by combination with sputter etching, CHIN PHYS L, 16(10), 1999, pp. 770-772
We have set up an experimental system consisting of an ion gun and a Ruther
ford backscattering spectrometry(RBS) analysis chamber. Using this system,
in situ 2Mev He-4(+) RBS analysis of films is carried out by combination wi
th sputter etching of low energy Ar+ ions. As an example of the sputtering/
RBS method, the analysis of three samples, i.e., Si/(GexSi1-x/Si)/Si(100),
WSix/SiO2/Si and CoSix/Si, is presented in this paper. After an appropriate
fraction of the thick layer is removed by sputtering, the back edge of the
Ge peak is separated from Si RBS spectrum an the interface and the O peak
of the buried SiO2 layer can be identified. The change of the doped Ti and
W concentrations related to Co on the top surface is observed. The advantag
es of this analytical method and its possible applications in film are disc
ussed.