Electrodeposition of InAs

We report on the direct electrodeposition of InAs films at room temperature . The electrochemical analog of atomic layer epitaxy was used to form the d eposits. Up to 160 nm thick films of InAs were formed by the alternating el ectrodeposition of atomic layers of In and As, under what appear to be surf ace limited conditions (underpotential deposits). The films obtained were c haracterized using atomic-force microscopy, X-ray diffraction, ellipsometry , and infrared absorption. (C) 1999 The Electrochemical Society. S1099-0062 (99)06-035-6. All rights reserved.