Gate oxides grown on deuterium-implanted silicon substrate

Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were inv estigated for the first time. It was observed that deuterium implantation a t a light dose of 1 x 10(14)/cm(2) at 25 keV significantly reduced the leak age current through the oxide. A reduction in electron trap density has als o been observed for this oxide. An increase in leakage current, observed fo r both higher and lower energy deuterium implants, was possibly because of enhanced substrate damage and out-diffusion of deuterium, respectively. Deu terium-implanted oxide, subjected to N2O annealing, showed further improvem ent in electrical characteristics. (C) 1999 The Electrochemical Society. S1 099-0062(99)07-091-1. All rights reserved.