Thin oxides (4 nm) grown on deuterium-implanted silicon substrates were inv
estigated for the first time. It was observed that deuterium implantation a
t a light dose of 1 x 10(14)/cm(2) at 25 keV significantly reduced the leak
age current through the oxide. A reduction in electron trap density has als
o been observed for this oxide. An increase in leakage current, observed fo
r both higher and lower energy deuterium implants, was possibly because of
enhanced substrate damage and out-diffusion of deuterium, respectively. Deu
terium-implanted oxide, subjected to N2O annealing, showed further improvem
ent in electrical characteristics. (C) 1999 The Electrochemical Society. S1
099-0062(99)07-091-1. All rights reserved.